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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D076
BLF544 UHF power MOS transistor
Product specification Supersedes data of October 1992 1998 Jan 21
Philips Semiconductors
Product specification
UHF power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Gold metallization ensures excellent reliability * Designed for broadband operation. APPLICATIONS * Communication transmitters in the UHF frequency range.
handbook, halfpage
BLF544
PINNING - SOT171A PIN 1 2 3 4 5 6 SYMBOL s s g d s s source source gate drain source source DESCRIPTION
2
4
6 d
DESCRIPTION N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. A marking code showing gate-source voltage (VGS) information is provided for matched pair applications.
g 1 Top view 3 5
MAM390
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source class-B circuit. MODE OF OPERATION CW, class-B CW, class-B f (MHz) 500 960 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. VDS (V) 28 28 PL (W) 20 20 Gp (dB) >11 typ. 7 D (%) >50 typ. 50
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1998 Jan 21
2
Philips Semiconductors
Product specification
UHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Tmb 25 C CONDITIONS - - - - -65 - MIN.
BLF544
MAX. 65 20 3.5 48 150 200
UNIT V V A W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink VALUE 3.7 0.4 UNIT K/W K/W
handbook, halfpage
10
MRA992
handbook, halfpage
60
MBK442
ID (A)
(1) (2)
Ptot (W)
(1)
40
1
(2)
20
10-1 1 10 VDS (V)
102
0 0 40 80 120 Th ( C) 160
(1) Current is this area may be limited by RDSon. (2) Tmb = 25 C.
(1) Short-time operation during mismatch. (2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
1998 Jan 21
3
Philips Semiconductors
Product specification
UHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGSth VGSth gfs RDSon IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched pairs forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 10 mA VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 40 mA; VDS = 10 V ID = 40 mA; VDS = 10 V ID = 1.2 A; VDS = 10 V ID = 1.2 A; VGS = 10 V VGS = 15 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 1 - 600 - - - - - TYP. - - - - - 900 0.85 4.8 32 24 6.4
BLF544
MAX. UNIT - 1 1 4 100 - 1.25 - - - - V mA A V mV mS A pF pF pF
handbook, halfpage
4
MDA504
handbook, halfpage
6
MDA505
T.C (mV/K) 2
ID (A) 4
0
2 -2
-4 10-2
10-1
0 1 ID (A) 10 0 5 10 15 VGS (V) 20
VDS = 10 V. VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current; typical values.
Fig.5
Drain current as a function of gate-source voltage; typical values.
1998 Jan 21
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
handbook, halfpage
2
MDA506
handbook, halfpage
RDSon () 1.6
100 C (pF) 80
MDA507
1.2
60
0.8
40
Cis Cos
0.4
20
0 0 50 100 Tj (C) 150
0 0 10 20 VDS (V) 30
ID = 1.2 A; VGS = 10 V. VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature; typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage; typical values.
handbook, halfpage
40
MDA508
Crs (pF) 30
20
10
0 0 10 20 VDS (V) 30
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage; typical values.
1998 Jan 21
5
Philips Semiconductors
Product specification
UHF power MOS transistor
APPLICATION INFORMATION Th = 25 C; Rth mb-h = 0.4 K/W unless otherwise specified. RF performance in a common source class-B circuit. MODE OF OPERATION CW, class-B CW, class-B CW, class-B f (MHz) 500 960 960 VDS (V) 28 28 24 IDQ (mA) 40 40 40 PL (W) 20 20 15 Gp (dB) >11 typ. 14 typ. 7 typ. 7
BLF544
D (%) >50 typ. 60 typ. 50 typ. 50
Ruggedness in class-B operation The BLF544 is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power.
handbook, halfpage
20 Gp
MDA512
(dB) 16
80 D (%)
handbook, halfpage
30
MDA513
Gp
PL (W) 20
12 60 8 D 10 4
0 10
40 14 18 22 26 PL (W) 30
0 0 1 2 PIN (W) 3
Class-B operation; VDS = 28 V; IDQ = 40 mA; ZL = 4.3 + j6.3 ; f = 500 MHz.
Class-B operation; VDS = 28 V; IDQ = 40 mA; ZL = 4.3 + j6.3 ; f = 500 MHz.
Fig.9
Power gain and efficiency as functions of load power; typical values.
Fig.10 Load power as a function of input power; typical values.
1998 Jan 21
6
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
handbook, full pagewidth
C14 C2 50 input C1 L1 L2 C4 L3 C8 L4 D.U.T. L5 L8 L9 C17 50 output
BLF544 C3 C5 C9 L6 C11 R1 C10 C6 R5 L7
C15
C16
C12 R2 C7 C13 +VD R3 f = 500 MHz R4
MDA502
Fig.11 Test circuit for class-B operation.
1998 Jan 21
7
Philips Semiconductors
Product specification
UHF power MOS transistor
List of components (see Figs 11 and 12). COMPONENT DESCRIPTION VALUE 390 pF; 500 V 16 pF; 50 V 2 to 9 pF 27 pF; 50 V 2 x 100 nF in parallel; 50 V 39 pF 100 nF; 50 V 4.7 F; 63 V 20 pF; 500 V 2 to 18 pF 50 50 50 42 31 nH 9.5 x 2.5 mm 34.5 x 2.5 mm 17.5 x 2.5 mm 3 x 3 mm length 7.5 mm int. dia. 3 mm leads 2 x 5 mm DIMENSIONS
BLF544
CATALOGUE NO.
C1, C6, C11, C17 multilayer ceramic chip capacitor; note 1 C2 C3, C5 C4 C7 C8, C9 C10, C12 C13 C14 C15, C16 L1 L2 L3 L4, L5 L6 multilayer ceramic chip capacitor; note 2 film dielectric trimmer multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor; note 1 film dielectric trimmer stripline note 3 stripline note 3 stripline note 3 stripline note 3 4 turns enamelled 0.8 mm copper wire grade 3B Ferroxcube RF choke stripline note 3 stripline note 3 0.4 W metal film resistor 10 turns cermet potentiometer 0.4 W metal film resistor 1 W metal film resistor
2222 809 09002
2222 852 47104
2222 852 47104 2222 030 38478
2222 809 09003
L7 L8 L9 R1, R2 R3 R4 R5 Notes
4312 020 36642 50 50 1 k 50 k 140 k 10 2322 151 11404 2322 153 51009 22 x 2.5 mm 39.5 x 2.5 mm 2322 151 11002
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with glass microfibre reinforced PTFE (r = 2.2); thickness 132 inch.
1998 Jan 21
8
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
handbook, full pagewidth
150
mounting screw straps rivets straps straps 70
straps mounting screw
R3 C7 R2 R5 C10 C2 C1 L1 C3 L2 C5 C4 R1 L3 C9 C15 C16 C8 L4 L5 C6 L6 L8 C11 C14 C17 L9 L7 C12 C13 +VD
MDA501
Dimensions in mm. The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Fig.12 Component layout for 500 MHz class-B test circuit.
1998 Jan 21
9
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
handbook, full pagewidth
C13 C2 50 input C1 L1 L2 C4 L3 C8 L4 D.U.T. L5
C15 L8
C17 L9 L10 C19
50 output
BLF544 C14 C3 C5 C9 L6 C11 C16 C18
R1 C7
R4
L7
C10 C6 C12 +VD
MDA503
R2 f = 960 MHz.
R3
Fig.13 Test circuit for class-B operation.
1998 Jan 21
10
Philips Semiconductors
Product specification
UHF power MOS transistor
List of components (see Figs 12 and 13) COMPONENT C1 C2 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 VALUE 68 pF; 500 V 1.6 pF; 50 V 1.4 to 5.5 pF 1 pF; 50 V 10 nF; 50 V 56 F; 500 V 6.8 F; 50 V 100 nF; 50 V 4.7 F; 63 V 16 pF; 50 V 18 pF; 50 V 62 pF; 500 V 50 50 50 42 16 nH 6 x 2.5 mm 38 x 2.5 mm 17.5 x 2.5 mm 3 x 3 mm length 3.4 mm int. dia. 3 mm leads 2 x 5 mm DIMENSIONS
BLF544
CATALOGUE NO.
C3, C5, C16, C18 film dielectric trimmer C4 C6 C7, C11
2222 809 09001
2222 852 47103
C8, C9, C15, C17 multilayer ceramic chip capacitor note 2 C10 C12 C13 C14 C19 L1, L8 L2 L3 L4, L5 L6 multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 1 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 2 turns enamelled 1 mm copper wire grade 3B Ferroxcube RF choke stripline; note 3 stripline; note 3 0.4 W metal film resistor 10 turns potentiometer 0.4 W metal film resistor 0.4 W metal film resistor
2222 852 47104 2222 030 38478
L7 L9 L10 R1 R2 R3 R4 Notes
4312 020 36642 50 50 15 k 50 k 140 k 10 2322 151 11404 2322 153 51009 21 x 2.5 mm 34.5 x 2.5 mm 2322 151 11473
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed-circuit board with glass microfibre reinforced PTFE (r = 2.2); thickness 132 inch.
1998 Jan 21
11
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
handbook, halfpage
5
MDA509
handbook, halfpage
20
MDA510
Zi () 0
ri
ZL () 15
RL
-5 xi
10
XL
-10
5
-15
0 0 200 400 f (MHz) 600 0 200 400 f (MHz) 600
Class-B operation; VDS = 28 V; IDQ = 40 mA; PL = 20 W.
Class-B operation; VDS = 28 V; IDQ = 40 mA; PL = 20 W.
Fig.14 Input impedance as a function of frequency (series components); typical values.
Fig.15 Load impedance as a function of frequency (series components); typical values.
Optimum input and load impedances
30
MDA511
handbook, halfpage
Gp (dB) 20
Optimum input impedance: 1.2 + j4.8 . Optimum load impedance: 2.6 - j3.1 . Conditions: class-B operation; VDS = 24 V; IDQ = 40 mA; f = 960 MHz; PL = 15 W; typical values.
10
0 0 200 400 f (MHz) 600
Class-B operation; VDS = 28 V; IDQ = 40 mA; PL = 20 W.
Fig.16 Power gain as a function of frequency; typical values.
1998 Jan 21
12
Philips Semiconductors
Product specification
UHF power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLF544
SOT171A
D
A F D1
U1 q H1 b1 C w2 M C
B
c
2
4
6
H
U2
E1
E
A
1
3
5
b e
p w3 M
w1 M A B Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.81 6.07 b 2.15 1.85 b1 3.20 2.89 c 0.16 0.07 D 9.25 9.04 D1 9.30 8.99 E 5.95 5.74 E1 6.00 5.70 e 3.58 F H H1 p 3.43 3.17 Q q U1 U2 w1 0.51 w2 1.02 0.04 w3 0.26 0.01
3.05 11.31 9.27 2.54 10.54 9.01
4.32 24.90 6.00 18.42 4.11 24.63 5.70
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224
OUTLINE VERSION SOT171A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
1998 Jan 21
13
Philips Semiconductors
Product specification
UHF power MOS transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BLF544
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Jan 21
14
Philips Semiconductors
Product specification
UHF power MOS transistor
NOTES
BLF544
1998 Jan 21
15
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127067/00/02/pp16
Date of release: 1998 Jan 21
Document order number:
9397 750 03117

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